In this research, targets of indium oxide doped with tin oxide were prepared by mixing powder of indium oxide doped with powder of tin oxide 3, 5 and 10 weight percent which were pressed and sintered at 1,300 degree Celsius for 3 hours in normal atmosphere. From crystal structure analysis by X-ray diffraction technique, the crystal structure of indium oxide has been shown obviously with dominant peaks of (222), (400), (440) and (622) planes. The target of indium oxide doped with tin oxide 10 weight percent has been used for preparations of indium tin oxide transparent conducting thin films with electrical resistivity of 2.97 ´ 10^-3 Ohm-cm.